to-92 plastic-encapsulate transistors 2SA950 transistor (pnp) features y 1w output a pplications y c omplementary to 2sc2120 maximum ratings ( t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.8 a p c collector power dissipation 0.6 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in typ max unit collector-base breakdown voltage v (br)cbo i c = -0.1ma , i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -10ma , i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e = -0.1ma, i c =0 -5 v collector cut-off current i cbo v cb = -35v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 100 320 dc current gain h fe(2) v ce =-1v, i c = -700ma 35 collector-emitter saturation voltage v ce(sat) i c = -500ma, i b = -20ma -0.7 v emitter-base voltage v be v ce =-1v, i c =-10ma -0.5 -0.8 v collector output capacitance c ob vcb=-10v,ie=0 f=1mhz 19 pf transition frequency f t v ce =-5v,i c =-10ma 120 mhz classification of h fe(1) rank o y range 100-200 160-320 to-92 1.emitter 2. collector 3. base tiger electronic co.,ltd b,nov,2011
-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1 -10 -100 -0.1 -1 -10 1 10 100 -10 -100 1 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -1 -10 -100 -100 -1000 -1 -10 -100 -10 -100 -1000 -1 -10 -100 10 100 1000 -0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -50 -100 -150 -200 -250 i c ?? v be collector current i c (ma) base-emmiter voltage v be (v) common emitter v ce =-1v t a = 1 0 0 t a = 2 5 -800 2SA950 typical characterisitics c ib c ob f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib ?? reverse voltage v (v) capacitance c (pf) -2 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce = -5v t a =25 p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( ) -2000 -800 =25 t a =25 t a =100 base-emitter saturation voltage v be (sat) (mv) collector current i c (ma) i c v besat ?? -800 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =25 t a =25 t a =100 common emitter t a =25 -800 t a =100 t a =25 i c collector current i c (ma) dc current gain h fe common emitter v ce =-1v h fe ?? -1.0ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -20 -0.2ma i b =-0.1ma static characteristic collector current i c (ma) collector-emitter voltage v ce (v) b,nov,2011
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